semiconductores :: calidad y medio ambiente:: aseguramiento de la calidad


Quality Management


Quality Assurance
>Certificates
>Quality policy
>TQM milestones
>Quality by design
>Supplier evaluation
>Quality assurance
>Reliability tests
>Basis of reliability tests
>Partnerships

Environmental Policy
>Ozone Depleting Substances
>RoHS Directive
>Lead-Free Status
>RoHS Compliance
>Product Identification
>Material Composition Declaration (MCD)

 

 

 

 

 
 
Quality by design
Fagor Electronica, S. Coop. believes that the Reliability of a product starts with the design. Therefore, meticulous care is put in the design and manufacturing stages.

According to our Quality System procedure, we assure that the products developed comply with the specified requirements and the development of them is focused on prevention to eliminate the appearance of possible problems in subsequent phases of the process.

This policy is implemented throughout a mandatory New Process / Product Qualification Procedure. Before releasing to manufacturing a new product or a major process change, it must be verified by QC department that the design meets mentioned procedure, which is based on the CDF-AEC-Q101 Stress Test Qualification for Automotive Grade Discrete Semiconductors.

 
Main tools used are:
Definition of customers needs by means of QFD.
Failure Mode and Effect Analysis (FMEA) to improve the Quality of the designs.
Design of Experiments (DOE) to find out the better solutions.
Value analysis to avoid or minimize not added value processes.
Statistical Process Monitoring (SPM) and Statistical Process Control (SPC) to monitor the performance of products and processes.
 
Tests applied are selected according to the Failure Mode Effect Analysis performed at design and according to the application conditions of the products. These tests are oriented to the package and to the chip performance and also to find out and to accelerate the failure mechanism.

 

Diodes Characterization
Characterization @ 25ºC
Characterization @ 150ºC
Vf: Max.Forward voltage @ If. Vf: Max. Forward voltage @ If.
Ir: Max. Reverse current @ Vrrm. Ir: Max. reverse current @ Vrrm.
Vbr: Breakdown voltage @ 0.1mA Vbr: Breakdown voltage @ 0.1mA
Trr: Max. reverse recovery time from
If = 0.5A ; Ir =1A ; Irm = 0.25A
trr: Max. reverse recovery time from If = 0.5A ; Ir =1A ; Irm = 0.25A
Cj: Typical Junction Capacitance @ 1 MHz.and Vr=-4V.  
  Ifsm: Peak forward surge current.
Rth: Thermal Resistance  
Ifav: Max. Average Forward Current.  
 
Thyristors Characterization
Characterization @ 25ºC Characterization @ 150ºC
VDRM / VRRM: Repetitive Peak Off-State Voltage VDRM / VRRM: Repetitive Peak Off-State Voltage
IGT: Gate Trigger Current dv/dt: Critical rate of voltage rise
IH: Holding Current dv/dtc: Critical rate of voltage rise after commutation
IL: Latching Current tq: Commutated turn-off time
VT: On-State voltage at data sheet conditions  
ITSM: Non-repetitive On-State Current, Half Cycle  
RTH: Thermal Resistance  
Rating: Max. Current so that Tj 125ºC when Tc is fixed @ 85ºC  
Tgd: Gate controlled delay time