At Fagor Electrónica, our commitment to innovation in the semiconductor field continues to advance. We are continuing to drive the development of Silicon Carbide (SiC) technology, which is key to next-generation power devices requiring greater efficiency, higher power density and improved thermal performance.

Today, we are announcing the launch of new SiC packaging formats, designed to meet the growing demands of applications such as electrification, renewable energy, industrial power conversion and e-mobility. Silicon Carbide technology enables operation at higher voltages, higher temperatures and higher switching frequencies compared to traditional silicon, making more efficient, compact and sustainable systems possible.